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| TetraFET D1003UK METAL GATE RF SILICON FET MECHANICAL DATA A B C 1 2 D E 4 M 3 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 60W - 28V - 175MHz SINGLE ENDED FEATURES * SIMPLIFIED AMPLIFIER DESIGN F G H K I J * SUITABLE FOR BROAD BAND APPLICATIONS * LOW Crss * SIMPLE BIAS CIRCUITS * LOW NOISE DM PIN 1 PIN 3 SOURCE SOURCE PIN 2 PIN 4 DRAIN GATE DIM A B C D E F G H I J K M mm 24.76 18.42 45 6.35 3.17 Dia. 5.71 12.7 Dia. 6.60 0.13 4.32 3.17 26.16 Tol. 0.13 0.13 5 0.13 0.13 0.13 0.13 REF 0.02 0.13 0.13 0.25 Inches 0.975 0.725 45 0.25 0.125 Dia. 0.225 0.500 Dia. 0.260 0.005 0.170 0.125 1.03 Tol. 0.005 0.005 5 0.005 0.005 0.005 0.005 REF 0.001 0.005 0.005 0.010 * HIGH GAIN - 16 dB MINIMUM APPLICATIONS * HF/VHF COMMUNICATIONS from 1 MHz to 175 MHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj Power Dissipation Drain - Source Breakdown Voltage Gate - Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature 117W 70V 20V 15A -65 to 150C 200C Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: sales@semelab.co.uk Prelim. 6/99 D1003UK ELECTRICAL CHARACTERISTICS (Tcase = 25C unless otherwise stated) Parameter Test Conditions Min. BVDSS IDSS IGSS gfs GPS Ciss Coss Crss Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Forward Transconductance * Common Source Power Gain Drain Efficiency Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS = 0 VDS = 28V VGS = 20V ID = 10mA VDS = 10V PO = 60W VDS = 28V f = 175MHz VDS = 0 VDS = 28V VDS = 28V VGS = -5V f = 1MHz VGS = 0 VGS = 0 f = 1MHz f = 1MHz IDQ = 0.3A ID = 100mA VGS = 0 VDS = 0 VDS = VGS ID = 3A 1 2.4 16 50 20:1 70 Typ. Max. Unit V 1 1 7 mA A V S dB % -- 180 90 7.5 pF pF pF VGS(th) Gate Threshold Voltage * VSWR Load Mismatch Tolerance * Pulse Test: Pulse Duration = 300 s , Duty Cycle 2% HAZARDOUS MATERIAL WARNING The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly toxic and care must be taken during handling and mounting to avoid damage to this area. THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE. THERMAL DATA RTHj-case Thermal Resistance Junction - Case Max. 1.5C / W Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: sales@semelab.co.uk Prelim. 6/99 D1003UK 140 120 100 Pout W 80 60 40 20 0 0 1 2 3 4 P in W Pout Drain Efficiency 80 70 60 50 Drain Efficiency 40 % P out W 140 120 100 80 60 40 20 0 17 16 15 14 Gain 13 dB VDS = 28V IDQ = 0.3A f = 175MHz 5 6 7 8 30 20 10 VDS = 28V IDQ = 0.3A f = 175MHz 0 1 2 3 4 P in W Pout Gain 12 11 10 5 6 7 8 Figure 1 - Power Output and Efficiency vs. Power Input. -10 -15 -20 IMD3 dBc Figure 2 - Power Output & Gain vs. Power Input. D1003UK OPTIMUM SOURCE AND LOAD IMPEDANCE VDS = 28V f1 = 175.0MHz f2 = 175.1MHz 0 20 40 60 P out W PEP -25 -30 -35 -40 -45 -50 80 100 Idq = 0.3A Idq = 2A 120 Frequency MHz 175MHz ZS ZL 2.0 - j4.3 3.7 - j4.5 Figure 3 - IMD vs. Output Power. Typical S Parameters ! # !Freq MHz 70 100 150 200 250 300 350 400 450 500 VDS = 28V, IDQ = 0.3A MHZ S MA R 50 S11 mag 0.83 0.87 0.91 0.93 0.95 0.97 0.96 0.98 0.98 0.97 ang -156.8 -163.3 -171.0 -177.6 177.6 173.6 168.6 165.0 161.9 159.3 S21 mag 6.9 4.3 2.3 1.4 0.9 0.7 0.5 0.4 0.3 0.3 ang 59.9 46.9 31.5 22.6 14.3 10.5 4.0 3.9 2.9 2.1 S12 mag 0.018 0.012 0.007 0.013 0.022 0.032 0.039 0.048 0.053 0.064 ang -16.7 -15.5 37.1 81.0 86.6 86.9 80.0 80.0 77.5 74.8 S22 mag 0.65 0.75 0.84 0.90 0.93 0.95 0.96 0.98 0.98 0.97 ang -137.0 -147.2 -159.7 -168.8 -175.0 179.5 175.3 172.0 169.8 166.5 Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: sales@semelab.co.uk Prelim. 6/99 D1003UK +28V Gate-Bias 10k 10nF 7 x 7 mm contact pad D1003UK 5-57pF T1 5-57pF T2 7 x 7mm contact pad L1 5-57pF 1nF 10nF 1F 22F 10K L3 L2 T3 T4 5-57pF D1003UK 175MHz TEST FIXTURE Substrate 1.6mm PTFE/ glass, Er= 2.5 All microstrip lines W= 4.4mm T1 T2 T3 T4 8mm 22mm 18mm 4.5mm L1 L2 L3 Hairpin loop 16swg 15.5mm dia. Hairpin loop 16swg 10mm dia. 11 turns 18swg enamelled copper wire, 10mm i. d. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: sales@semelab.co.uk Prelim. 6/99 |
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